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high temperature resistance power mosfet
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Temperature Resistant Silicon Carbide SBD for Frequency and Power Electronics *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ...
2025-07-28 00:25:39
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... • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness ...
2025-07-28 00:25:39
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Product Description: The High Power Semiconductor is particularly useful in charging pile applications for electric vehicles, where high voltage power ...
2025-07-28 00:25:40
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*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;...
2025-07-28 00:25:39
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High Efficiency 15A 650V High Power IGBT TO-263C For Motor Control MAIN CHARACTERISTICS IC @TC=100℃ 15A VCE 650V VCE(sat)-typ 1.6V FEATURES • High ...
2025-07-28 00:25:39
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...Positive VCE (sat) temperature coefficient • High efficiency for motor control • Excellent current sharing in parallel operation • RoHS compliant. ...
2025-07-28 00:25:39
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... High Power IGBT TO-220F For Home Appliances MAIN CHARACTERISTICS IC @TC=100℃ 15A VCE 650V VCE(sat)-typ 1.60V FEATURES • High ruggedness performanc...
2025-07-28 00:25:39
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...Positive VCE (sat) temperature coefficient • High efficiency for motor control • Excellent current sharing in parallel operation • RoHS compliant ...
2025-07-28 00:25:39
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...Power Supply Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj (℃) If (A) Typ (V) Max (V) Typ (uA) Max (uA) If (A) ...
2025-02-08 13:30:16
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...Power Transistor And Inverter IGBT High Voltage 1200V 40A Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable ...
2025-07-28 00:25:39
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