China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high switching speed sic mosfets

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N-Channel Enhancement Mode Power MOSFET 11A 400V For Adaptor And Charger MAIN CHARACTERISTICS ID:11A VDSS:400V RDSON-typ (@VGS=10V):0.5Ω FEATURES Fast ... 2025-07-11 00:37:58
Load Switches In Battery-Powered Devices Low Voltage MOSFET 60V Product Description: One of the key benefits of this MOSFET is its low Rds(ON) ... 2025-07-11 00:37:58
... MAX Typ Typ CS2N65A5 TO-252 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: This MOSFET product is built with advanced MOSFET technology ... 2025-02-08 13:29:32
Low Reverse Transfer Capacitance High Voltage MOSFET For Switched Mode Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
Compact Low Resistance High Voltage MOSFET Switching Circuit for Adaptor and Charger *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
Reliable Surface Amount Low Voltage Mosfet For High-Frequency Switching Applications *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-02-08 13:29:00
... switching and efficient power management. With this feature, the MOSFET is capable of handling high current loads with minimal loss, resulting in ... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
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