China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
1
Home > Products >

high power super junction mosfet

Browse Categories

Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
View Contact Details
121 - 130 of 197

high power super junction mosfet

Selling leads
Product Description: Our High Voltage Power Semiconductors are characterized by their High Light, Rapid Switching Capabilities, and Robust Thermal ... 2025-07-28 00:25:39
Product Description: The High Power Semiconductor is particularly useful in charging pile applications for electric vehicles, where high voltage power ... 2025-07-28 00:25:40
.... With low power loss and low gate charge, this MOSFET helps to minimize switching loss and reduce power consumption, making it an ideal choice for ... 2025-07-28 00:25:39
4A 500V 2.1Ω N-Channel Enhancement Mode Power MOSFET For Standby Power N-Channel Enhancement Mode Power MOSFET Part No.:CS4N50A Package:TO-220F/TO-252... 2025-07-28 00:25:39
... power consumption. The use of high-quality silicon material ensures reliable performance and long-term durability. With its low power loss, this ... 2025-07-28 00:25:40
... management and reduces power loss. The MOSFET is made from high-quality silicon material which ensures high efficiency and reliable performance. ... 2025-07-28 00:25:39
N-Channel Enhancement Mode Power MOSFET 11A 400V For Adaptor And Charger MAIN CHARACTERISTICS ID:11A VDSS:400V RDSON-typ (@VGS=10V):0.5Ω FEATURES Fast ... 2025-07-28 00:25:39
Product Description: Voltage Low Leakage Junction Capacitance High Temperature Resistance Semiconductor Bolstering Technology The High-temperature ... 2025-07-28 00:25:39
50A200V N Channel Enhancement MOSFET Low Power Loss Silicon MOSFET Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V... 2025-04-01 14:35:10
... properties such as high thermal conductivity, high breakdown voltage, and low switching losses. The use of silicon carbide material in the MOSFET ... 2025-07-28 00:25:39
Page 13 of 20 :   |< << 9 10 11 12 13 14 15 16 17 >> >|