China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power semiconductor to 220f

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power semiconductor to 220f

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650V IGBT Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ... 2025-07-11 00:37:58
Durable Silicon Carbide Semiconductor High Power Transistor SiC MOS Multifunctional *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html... 2025-07-11 00:37:58
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-11 00:37:58
...220F Metal-Oxide-Semiconductor Field-Effect Transistors N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID... 2025-07-11 00:37:58
...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of ... 2025-07-11 00:37:58
...High Power MOSFET TO-220F Package Fast Switching Applications: The High Power MOSFET is an ideal component for high-power applications, thanks to ... 2025-07-11 00:37:58
20A 650V 150mΩ Stability And Uniformity Cool MOS For Switched Mode Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F ... 2025-07-11 00:37:58
...Typ (uA) Max (uA) If (A) Typ (V) Typ (mA) MBR2060FCT TO-220F 1 20 60 10 0.74 0.78 4.0 20 - - - 150 150 Product Description: The MBR2060FCT Schottky ... 2025-02-08 13:30:15
...220F Thick Frame High Voltage Mosfet For Uninterruptible Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(m... 2025-02-10 11:19:53
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
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