China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power mosfet to 220f

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power mosfet to 220f

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... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical ... 2025-07-11 00:37:58
High Voltage Tolerance Power Semiconductor For Power Converter *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;... 2025-07-11 00:37:58
Product Description: Power N Type Low Junction Capacitance Transistor One of the unique features of this semiconductor is its low junction capacitance... 2025-07-11 00:37:58
...High Power IGBT With Fast Switching Speed For Automotive Electronics Product Description: Our High Power IGBT product is a combination of the best ... 2025-07-11 00:37:58
...Power Mosfet N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced Trench Technology Excellent RDS(ON) and ... 2025-07-11 00:37:58
Product Description: High Efficiency is a crucial attribute for high-power electronic systems, and our product is designed to deliver it. It ensures ... 2025-07-11 00:37:58
...High Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID:15A VDSS... 2025-07-11 00:37:58
...High Power Semiconductor For Hairdryer N-Channel Enhancement Mode Power MOSFET Part No.:CS5N50A5 Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS... 2025-07-11 00:37:58
Large EMI Margin Super Junction MOSFET For High Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;... 2025-07-11 00:37:58
... properties such as high thermal conductivity, high breakdown voltage, and low switching losses. The use of silicon carbide material in the MOSFET ... 2025-07-11 00:37:58
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