China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power igbt to 220f

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power igbt to 220f

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Altra-Low Internal Resistance High Voltage MOSFET For Charging Pile FEATURES • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low ... 2025-07-11 00:37:58
...IGBT Practical For Photovoltaic Inverter Home appliances • Motor drives • Fan, Pumps, Vacuum cleaner • General inverter Resonant converters • UPS • ... 2025-07-11 00:37:58
...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of ... 2025-07-11 00:37:58
...High Power MOSFET TO-220F Package Fast Switching Applications: The High Power MOSFET is an ideal component for high-power applications, thanks to ... 2025-07-11 00:37:58
... range of 20KHz-60KHz, this device is capable of handling a wide range of applications, from consumer electronics to power generation and ... 2025-07-11 00:37:58
... switching capability APPLICATIONS • Energy storage • Solar string inverter • Uninterruptible power supplies Q1.Who are we? A:We are based in ... 2025-07-11 00:37:58
... • Low collector to emitter saturation voltage • Easy parallel switching capability • Short circuit withstands time 10μs • High ruggedness ... 2025-07-11 00:37:58
...220F Thick Frame High Voltage Mosfet For Uninterruptible Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(m... 2025-02-10 11:19:53
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...220F Metal-Oxide-Semiconductor Field-Effect Transistors N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID... 2025-07-11 00:37:58
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