China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high current capability sbt30l45dc

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high current capability sbt30l45dc

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Product Description: One of the key features of High Voltage Power Semiconductors is their ability to handle high voltages and currents efficiently. ... 2025-07-11 00:37:58
...High Voltage MOSFET N-Type CS20N50A8 TO-220F For Power Supplies Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg ... 2025-02-08 13:29:43
...Current Schottky Diodes For Communication Equipment Features: Product Name: Schottky Barrier Diodes Package: TO-251, TO-252, TO-263, TO-220, TO-247 ... 2025-07-11 00:37:58
...High reverse saturation current Schottky Diodes Unbeatable Performance MBR10200FCT Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR ... 2025-07-11 00:37:59
...High Speed For Energy Storage Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged PFC applications • ... 2025-07-11 00:37:58
30A100V MBR30100CT Low VF Schottky Diodes With High Reverse Saturation Current Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ ... 2025-07-11 00:37:58
10A150V MBR10150CT Low VF Schottky Barrier Diodes High Reverse Saturation Current Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ ... 2025-07-11 00:37:59
... TO-220AB 2 30 600 15 1.20 1.60 0.02 1 - - - 250 50 150 Product Description: The Fast Recovery Diodes are capable of operating in a wide temperatur... 2025-07-11 00:37:59
20A400V MUR2040CT High speed switching FRD Fast Recovery Diodes TO-220AB Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM ... 2025-07-11 00:37:59
High Breakdown Voltage Silicon Carbide SBD For Data Center Features ·Negligible reverse recovery ·High surge current ·Positive temperature coefficient ... 2025-07-11 00:37:58
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