China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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fast recovery diode mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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fast recovery diode mosfet

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... TO-220F 1 40 100 15 20 0.79 0.82 0.82 0.88 1.0 5 5 0.54 0.325 300 175 Product Description: These diodes offer a low-cost solution for a variety of ... 2025-07-11 00:37:59
... 10 0.46 0.52 40 120 3 10 - - 180 150 Product Description: Designed to meet the needs of modern electronics, this diode offers a low reverse ... 2025-07-11 00:37:58
... (V) Typ (mA) MBR1645FCT TO-220F 1 16 45 8 0.55 0.6 22.0 50 3 - - 200 150 Product Description: The Schottky Barrier Diodes are designed to be used ... 2025-07-11 00:37:59
SBT30L150PT Low VF Schottky Rohs Compliant Rohs Characteristics Low Reverse Recovery Time Operating Temperature Range -55°C To 150°C Part Number ... 2025-07-11 00:37:58
...Recovery Time Low VF Schottky​ Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ IFSM (A) Tj (℃) Min (V) IF (A) ... 2025-07-11 00:37:59
... 100 3 5 0.55 0.65 - 0.73 8 30 5 0.63 2.7 100 Product Description: The Low VF Schottky product is designed to provide fast switching speed and high ... 2025-07-11 00:37:59
20A80V SBT20V80CT Fast Switching Speed Low VF Schottky Diodes For Rectifier Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) ... 2025-07-11 00:37:59
30A45V SBT30L45FCT Low VF Diodes With Fast Switching Speed TO-220F Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR ... 2025-07-11 00:37:59
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;... 2025-07-11 00:37:58
Inverter IGBT With SiC Mosfet For Brushless Motors And Lithium Battery Management Features • Positive temperature coefficient • Fast Switching • Low ... 2025-07-11 00:37:58
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