China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
1
Home > Products >

enhancement mode high power mosfet

Browse Categories

Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
View Contact Details
171 - 175 of 175

enhancement mode high power mosfet

Selling leads
...Mode Power Supplies Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj (℃) Min (V) If (A) Typ (V) Max (V) Typ (uA) ... 2025-07-28 00:25:40
High Current Capability Schottky Barrier Diodes For DC/DC conerters Features • Low forward voltage • High current capability • High forward surge ... 2025-07-28 00:25:39
...Power Rectifier​ Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Trr Tj (℃) Min (V) If (A) Typ (V) Max (V) Typ ... 2025-07-28 00:25:40
...MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low RDS(on) ... 2025-07-28 00:25:39
... voltage • Short circuit withstands time 10μs • High ruggedness performance • Easy parallel switching capability APPLICATIONS • Inverter TO-247 • ... 2025-07-28 00:25:40
Page 18 of 18 :   |< << 8 9 10 11 12 13 14 15 16 17 18 >> >|