China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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enhancement mode high power igbt

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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enhancement mode high power igbt

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... time 10μs • High ruggedness performance Home appliances • Resonant converters • Hair removal device • Solar string inverter • Uninterruptible ... 2025-07-28 00:25:39
... • Very tight parameter distribution • Positive VCE (sat) temperature coefficient • High efficiency for motor control • Excellent current sharing ... 2025-07-28 00:25:40
20A 650V 150mΩ Stability And Uniformity Cool MOS For Switched Mode Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F ... 2025-07-28 00:25:39
... N 10 500 ±30 2 4 460 550 Product Description: One of the standout features of the CS10N50A2 MOSFET is its low ON resistance, which allows for ... 2025-02-08 13:29:39
... • Fast Switching • Low VCE(sat) • Reliable and Rugged Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a national high... 2025-07-28 00:25:40
...IGBT Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Positive temperature coefficient • Fast ... 2025-07-28 00:25:40
7A 650V 525mΩ TO-220F Cool MOS For Uninterruptible Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTIC... 2025-07-28 00:25:39
... MAX Typ Typ CS5N60A2 TO-220F N 5 600 ±30 2 4 1800 2300 17.6 618 Product Description: One of the key features of our High Voltage MOSFET is its Low ... 2025-02-08 13:29:43
...High Voltage MOSFET For Switch Mode Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) ... 2025-02-08 13:29:41
... CS28N50A6 TO-247 N 28 500 ±30 2 4 200 240 Product Description: With 100% avalanche tested technology, this MOSFET can withstand high voltages and ... 2025-02-08 13:29:27
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