China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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emi superjunction power mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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emi superjunction power mosfet

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Power Discrete Devices with Ultra Low On-Resistance and Large EMI Margin *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-28 00:25:40
Large EMI Margin Excellent Gate Charge 100% Avalanche Tested Much Lower Ron*A Performance for On-state Efficiency *, *::before, *::after {box-sizing: ... 2025-07-28 00:25:39
...MOSFET TO-252 Surface Mount Hign Power Mos N-channel Super Junction MOSFET Part No.:LC65R900D Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS:650V ... 2025-07-28 00:25:39
...MOSFET For Solar Inverters N-channel Super Junction MOSFET Part No.:LC65R900F Package:TO-220F MAIN CHARACTERISTICS ID:5A VDSS:650V RDSON-typ VGS... 2025-07-28 00:25:39
... speeds and low power dissipation. With its low RDS(ON) resistance, our MOSFET product can handle high current loads with minimal power loss, ... 2025-07-28 00:25:40
...ideal for use in battery-powered devices that require low power consumption. This MOSFET also offers high switching speeds and low gate charge, ... 2025-07-28 00:25:39
... and conduction loss • Extremely high commutation ruggedness APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC... 2025-07-28 00:25:39
... for different system designs. Its low Rds(ON) resistance ensures efficient power transfer, reducing power loss and heat dissipation. Our Low ... 2025-07-28 00:25:40
.... With low power loss and low gate charge, this MOSFET helps to minimize switching loss and reduce power consumption, making it an ideal choice for ... 2025-07-28 00:25:39
...Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON-typ VGS=10V:520mΩ ... 2025-07-28 00:25:39
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