China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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cs5n65a2 high switching speed mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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cs5n65a2 high switching speed mosfet

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...High efficiency Low VF Schottky Diodes For Power Supplies Part Number Package Die Io (A) VBR @IR VF(25℃) @IF IR(25℃) @VBR VF(125℃) @IF IR (125℃ ... 2025-07-11 00:37:59
20A400V MUR2040CT High speed switching FRD Fast Recovery Diodes TO-220AB Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) ... 2025-07-11 00:37:59
... • Solar inverters Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Q1.Who are we? A:We are based ... 2025-07-11 00:37:58
MUR1560 The High Speed Switching Capability of Express and Ultrafast Recovery Diodes for High Frequency Circuits Part Number Package Die Io (A) VBR ... 2025-02-08 13:31:06
...Speed Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged Home appliances • Portable power station • Energy ... 2025-07-11 00:37:58
High Breakdown Voltage Silicon Carbide SBD For Data Center Features ·Negligible reverse recovery ·High surge current ·Positive temperature coefficient ... 2025-07-11 00:37:58
...High Current TO-247 Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Trr Tj (℃) Min (V) If (A) Typ (V) Max (V) Typ ... 2025-07-11 00:37:58
7A 650V 525mΩ TO-220F Cool MOS For Uninterruptible Power Supply N-channel Super Junction MOSFET Part No.:LC65R600F Package:TO-220F MAIN CHARACTERISTIC... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
... Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low ... 2025-07-11 00:37:58
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