China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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charging pile igbt transistor

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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charging pile igbt transistor

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Multifunctional Power Transistor And Inverter IGBT High Voltage 1200V 40A Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) ... 2025-07-11 00:37:58
High Efficiency Insulated Gate Bipolar Transistor For Electric Motors Product Description: Designed for extreme performance, this IGBT device boasts a ... 2025-07-11 00:37:58
Power Faster Switching Speed Isolated Gate Bipolar Transistor For Power Supply Units *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
Multiscene Insulated Gate Bipolar Transistor Inverter For Uninterruptible Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;... 2025-07-11 00:37:58
Practical Low Power Mosfet Transistors 20V 60V For Wireless Charging Features: Product Name: Low Voltage MOSFET Advantages: Improved System Efficiency ... 2025-07-11 00:37:58
Practical N Channel High Power MOSFET Multipurpose Solar Inverter Transistor Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% ... 2025-07-11 00:37:58
...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of ... 2025-07-11 00:37:58
... Low On Resistance HV Transistor N-channel Super Junction MOSFET Part No.:LCS65R1K0D Package:TO-252 MAIN CHARACTERISTICS ID:4A VDSS:650V RDSON-typ ... 2025-07-11 00:37:58
...220F Metal-Oxide-Semiconductor Field-Effect Transistors N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID... 2025-07-11 00:37:58
... for a wide range of applications. This product is known for its low junction capacitance and N-type design, which makes it ideal for use in ... 2025-07-11 00:37:58
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