China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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charging pile high power semiconductor

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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charging pile high power semiconductor

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... that is capable of handling high currents and voltages. It has a voltage rating that ranges from 650V to 1200V, making it suitable for various ... 2025-07-11 00:37:58
...High Power IGBT With Fast Switching Speed For Automotive Electronics Product Description: Our High Power IGBT product is a combination of the best ... 2025-07-11 00:37:58
...High Power MOSFET Ideal For Power Factor Correction Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche ... 2025-07-11 00:37:58
...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of ... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-11 00:37:58
...High Power MOSFET N Channel Stable For Motor Driver Features • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche ... 2025-07-11 00:37:58
...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of ... 2025-07-11 00:37:58
...High Power MOSFET N-Channel Multiscene Industrial Mos N-Channel Enhancement Mode Power MOSFET Part No.:CS3N50A2 Package:TO-251 MAIN CHARACTERISTICS ... 2025-07-11 00:37:58
650V IGBT Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ... 2025-07-11 00:37:58
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