China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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advanced applications low rds on mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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advanced applications low rds on mosfet

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...MOSFET For Solar Inverters N-channel Super Junction MOSFET Part No.:LC65R900F Package:TO-220F MAIN CHARACTERISTICS ID:5A VDSS:650V RDSON-typ VGS... 2025-07-10 00:29:15
...MOSFET TO-252 Surface Mount Hign Power Mos N-channel Super Junction MOSFET Part No.:LC65R900D Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS:650V ... 2025-07-10 00:29:15
... MAX Typ Typ CS2N65A5 TO-252 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: This MOSFET product is built with advanced MOSFET technology ... 2025-02-08 13:29:32
...Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS ... 2025-07-10 00:29:15
...MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ID:11A VDSS:650V RDSON-typ VGS... 2025-07-10 00:29:15
... MAX Typ Typ CS8N65A2 TO-220F N 8 650 ±30 2 4 1040 1500 24 1107 Product Description: One of the key highlights of this MOSFET is its low ON ... 2025-02-08 13:29:28
...Max. Typ MAX Typ Typ CS4N65A5 TO-252 N 4 650 ±30 2 4 2220 2570 Product Description: Our MOSFET uses advanced technology to ensure maximum ... 2025-02-08 13:29:31
... management and reduces power loss. The MOSFET is made from high-quality silicon material which ensures high efficiency and reliable performance. ... 2025-07-10 00:29:15
...Mosfet Low On Resistance HV Transistor N-channel Super Junction MOSFET Part No.:LCS65R1K0D Package:TO-252 MAIN CHARACTERISTICS ID:4A VDSS:650V ... 2025-07-10 00:29:15
... MAX Typ Typ CS2N65A2 TO-220F N 2 650 ±30 3 4 4000 4500 11 295 Product Description: The High Voltage MOSFET product features a gate-source voltage ... 2025-02-08 13:29:30
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