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650v igbt power transistor
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Durable Silicon Carbide Semiconductor High Power Transistor SiC MOS Multifunctional *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html...
2025-07-11 00:37:58
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9A500V CS9N50A2 TO-220F High Voltage Mosfet N Channel Power Transistors Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ...
2025-02-08 13:29:44
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*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;...
2025-07-11 00:37:58
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... in high voltage and high power applications. With a wide range of voltage rating from 650V to 1200V, this device is capable of delivering ...
2025-07-11 00:37:58
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... to 60KHz. This faster switching speed allows for more efficient motor control and reduces the risk of damage to the device. Our High Power IGBT is ...
2025-07-11 00:37:58
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... capability APPLICATIONS • Energy storage • Solar string inverter • Uninterruptible power supplies Q1.Who are we? A:We are based in Guangdong, ...
2025-07-11 00:37:58
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... switching capability APPLICATIONS • PFC applications • Uninterruptible power supplies • Solar inverters Q1.Who are we? A:We are based in Guangdong...
2025-07-11 00:37:58
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... • Low VCE(sat) • Reliable and Rugged APPLICATIONS • UPS • Motor drives • Boost • Portable power station Q1.Who are we? A:We are based in Guangdong...
2025-07-11 00:37:58
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...650V High Frequency N Channel Enhancement Mode Power IGBT For PFC MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):33nS FEATURES • ...
2025-07-11 00:37:58
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...650V Low switching loss Low Frequency Power IGBT For Boost MAIN CHARACTERISTICS Ic @TC=100℃ 60A VCE 650V VCE(sat)-typ 1.7V FEATURES • Positive ...
2025-07-11 00:37:58
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