China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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650v fast recovery diode

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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650v fast recovery diode

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40A 650V Low Frequency High Power IGBT For Solar Inverters MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):188nS FEATURES • Positive ... 2025-07-11 00:37:58
50A 650V Reliable And Rugged Low Frequency Power IGBT For Portable Power Station MAIN CHARACTERISTICS Ic @TC=100℃ 50A VCE 650V VCE(sat)-typ 1.65V ... 2025-07-11 00:37:58
60A 650V Low switching loss Low Frequency Power IGBT For Boost MAIN CHARACTERISTICS Ic @TC=100℃ 60A VCE 650V VCE(sat)-typ 1.7V FEATURES • Positive ... 2025-07-11 00:37:58
... (V) Typ (mA) MBR30100FCT TO-220F 1 30 100 15 0.81 0.88 1.5 10 5 - - 350 150 Product Description: These Schottky diodes are designed to provide ... 2025-02-08 13:30:11
Faster Switching Speed 650V-1200V Power IGBT in TO-247 Package Product Description: With a fast switching speed, the High Power IGBT is ideal for ... 2025-07-11 00:37:58
... 0.67 - 0.73 9 70 5 15 0.44 0.63 7 220 150 Product Description: One of the key features of this product is its low reverse recovery time, which ... 2025-07-11 00:37:59
... • Portable power station • Energy storage PFC applications • Uninterruptible power supplies • Solar inverters Positive temperature coefficient • ... 2025-07-11 00:37:58
650V 50A Inverter IGBT Multifunctional High Speed For Energy Storage Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • ... 2025-07-11 00:37:58
... (mA) MBR20150CS TO-252 1 20 150 10 0.83 0.90 1.1 10 3 - - 290 150 Product Description: The Schottky Barrier Diodes are commonly used in a variety ... 2025-07-11 00:37:58
...Diodes Fast Switching Speed TO-220AB Part Number Package Die Io (A) VBR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Tj (℃) If (A) Typ (V) Max (V) ... 2025-02-08 13:30:02
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