switching mode regulator

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Mega Source Elec.Limited

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switching mode regulator

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IGBT Power Module MG200H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs ... 2024-12-09 10:41:47

IGBT Power Module MG200H1FL1A - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... IGBT Description: High Power Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input ... 2024-12-09 10:41:47

IGBT Power Module MG200H1JK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs ... 2024-12-09 10:41:47

IGBT Power Module MG200H2CK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs ... 2024-12-09 10:41:47

IGBT Power Module MG200H2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs ... 2024-12-09 10:41:47

IGBT Power Module MG200J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs ... 2024-12-09 10:41:47

IGBT Power Module MG200J2YS1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs ... 2024-12-09 10:41:47

IGBT Power Module MG200J2YS11- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs ... 2024-12-09 10:41:47

IGBT Power Module MG200J2YS40 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs ... 2024-12-09 10:41:47

IGBT Power Module MG200J2YS42 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs ... 2024-12-09 10:41:47

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