China Compound Optical Microscope manufacturer
Opto-Edu (Beijing) Co., Ltd.
Opto-Edu (Beijing) Co., Ltd.
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OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

Brand Name CNOEC, OPTO-EDU
Model Number A63.7190
Certification CE, Rohs
Place of Origin China
Minimum Order Quantity 1 pc
Price FOB $1~1000, Depend on Order Quantity
Payment Terms T/T, West Union, Paypal
Supply Ability 5000 pcs/ Month
Delivery Time 5~20 Days
Packaging Details Carton Packing, For Export Transportation
Wafer Size A63.7190-68: 6/8 Inches
Resolution 2.5nm (Acc=800V)
Accelerating Voltages 0.5-1.6KV
Repeatability Static & Dynamic ±1% or 3nm(3 Sigma)
Probe Beam Current 3~30pA
Measuring Range FOV 0.1~2.0μm
Detailed Product Description
  • Compatible With 6/8 Inch Wafers Size, Magnification 1000x-300000x
  • Resolution 2.5nm (Acc=800V), Accelerating Voltages 500V--1600V
  • Repeatability Static & Dynamic ±1% or 3nm(3 Sigma), Probe Beam Current 3~30pA
  • High-Speed Wafer Transfer System Design Suitable For 3rd-Generation Semiconductor Chips
  • Advanced Electron Optics Systems And Image Processing, Including Chiller, Dry pump
 

A Critical Dimension Scanning Electron Microscope (CD-SEM) is a specialized SEM used to measure the dimensions of tiny features on semiconductor wafers, photomasks, and other materials. These measurements are crucial for ensuring the accuracy and precision of manufactured electronic devices. 

 

◉  Compatible With 6/8 Inch Wafers Size, Magnification 1000x-300000x

◉  Resolution 2.5nm (Acc=800V), Accelerating Voltages 500V--1600V

◉  Repeatability Static & Dynamic ±1% or 3nm(3 Sigma), Probe Beam Current 3~30pA

◉  High-Speed Wafer Transfer System Design Suitable For 3rd-Generation Semiconductor Chips

◉  Advanced Electron Optics Systems And Image Processing, Including Chiller, Dry pump

 
 

Key Features

CD-SEMs use a low-energy electron beam and have enhanced magnification calibration to ensure accurate and repeatable measurements. They are designed to measure features like the width, height, and sidewall angles of patterns. 

 
 

Purpose

CD-SEMs are essential for metrology in the semiconductor industry, helping to measure the critical dimensions (CDs) of patterns created during lithography and etching processes. CDs refer to the smallest feature sizes that can be reliably produced and measured on a wafer. 

 

Applications

These instruments are used in the manufacturing lines of electronic devices to ensure the dimensional accuracy of the various layers and features that make up a chip. They also play a crucial role in process development and control, helping to identify and correct any issues that may arise during the manufacturing process. 

 

Importance

Without CD-SEMs, modern microelectronics would struggle to achieve the high level of precision and performance that is demanded by the industry. They are indispensable for ensuring the reliability and functionality of modern electronic devices. 

 

Shifting Technology

As lithography techniques advance and feature sizes continue to shrink, CD-SEMs are constantly evolving to meet the demands of the industry. New technologies and advancements in CD-SEM are being developed to address the challenges of measuring increasingly complex patterns

 
 
 
 
 
 
A63.7190 Critical Dimension Scanning Electron Microscope (CDSEM)
Wafer Size A63.7190-68: 6/8 InchesA63.7190-12: 12 Inches
Resolution 2.5nm (Acc=800V)1.8nm (Acc-800V)
Accelerating Voltages 0.5-1.6KV0.3-2.0KV
Repeatability Static & Dynamic ±1% or 3nm(3 Sigma)Static & Dynamic ±1% or 0.3nm(3 Sigma)
Probe Beam Current 3~30pA3~40pA
Measuring Range FOV 0.1~2.0μmFOV 0.05~2.0μm
Throughput >20 Wafers/Hour, >36 Wafers/Hour, 
1 Point/Chip, 1 Point/Chip, 
20 Chips/Wafer20 Chips/Wafer
Magnification 1Kx~300Kx1Kx-500Kx
Stage Accuracy 0.5μm
Electron SourceSchottky Thermal Field Emitter

 
Comparation of Main CDSEM Models on Market
SpecificationHitachi Hitachi Hitachi Opto-Edu Opto-Edu 
S8840S9380S9380 IIA63.7190-68A63.7190-12
1. Wafer Size6inch/8inch8inch/12inch8inch/12inch6inch/8inch12inch
2. Resolution5nm (Acc=800V)2nm (Acc=800V)2nm (Acc=800V)2.5nm (Acc=800V)1.8nm (Acc=800V)
3. Accelerating Voltage500-1300V300-1600V300-1600V500-1600V300-2000V
4. Repeatability (static and dynamic)±1% or 5nm(3 sigma)±1% or 2nm(3 sigma)±1% or 2nm(3 sigma)±1% or 3nm(3 sigma)±1% or 0.3nm(3 sigma)
5. Ip Range (Probe current)1-16pA3-50pA3-50pA3-30pA3-40pA
6. FOV Size-50nm-2um0.05-2um0.1-2um0.05-2um
7.Througput26 wafers/hour,24 wafers/hour,24 wafers/hour,>20wafers/hour,36 wafers/hour,
1point/chip,1point/chip,1point/chip,1point/chip,1point/chip,
5chips/wafer20chips/wafer20chips/wafer20chips/wafer20chips/wafer
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