FP50R12KT4_B11 Infineon Full Bridge Igbt Module AG | Emitter Controlled 4 Diode

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Hontai Machinery and equipment (HK) Co. ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-82861683

Contact Person:
Ms.Biona View Contact Details

FP50R12KT4_B11 Infineon Full Bridge Igbt Module AG | Emitter Controlled 4 Diode

Brand Name	Infineon
Model Number	FF1500R12IE5
Place of Origin	China
Minimum Order Quantity	1 set
Payment Terms	T/T
Supply Ability	1000sets
Delivery Time	25 days after signing the contract
Packaging Details	Wooden box packing
VCES	1200V
IC nom	1500A
ICRM	3000A
Mechanical Features	Copper BasePlate

Detailed Product Description

IGBT power modules FP50R12KT4_B11 Infineon Technologies AG | Emitter Controlled 4 diode

Typical Applications
• Auxiliary Inverters
• Motor Drives
• Servo Drives

Electrical Features
• Low SwitchingLosses
• Tvj op = 150°C
• VCEsat withpositiveTemperature Coefficient
• Low VCEsat

Mechanical Features
• High Power and ThermalCycling Capability
• HighPower Density
• Integrated NTC temperaturesensor
• Copper BasePlate
• PressFIT Contact Technology
• Standard Housing

Product Tags: high power igbt module eupec igbt module

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