Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop

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Hontai Machinery and equipment (HK) Co. ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-82861683

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Infineon IGBT Power Module FF50R12RT4 34mm 1200V Dual IGBT With Fast Trench / Fieldstop

Brand Name	Infineon
Model Number	FF50R12RT4
Place of Origin	China
Minimum Order Quantity	1 set
Payment Terms	T/T
Supply Ability	1000sets
Delivery Time	25 days after signing the contract
Packaging Details	Wooden box packing
VCES	1200V
IC nom	50A
ICRM	100A
Applications	Motor Drives
Electrical Features	Low Switching Losses

Detailed Product Description

Infineon FF50R12RT4 well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled

Typical Applications

• High Power Converters

• Motor Drives

• UPS Systems

Electrical Features

• Extended Operation Temperature Tvj op

• Low Switching Losses

• Low VCEsat

• Tvj op = 150°C

• VCEsat with positive Temperature Coefficient

Mechanical Features

• Isolated Base Plate

• Standard Housing

IGBT,Inverter

Maximum Rated Values

Collector-emitter voltage	Tvj = 25°C	VCES	1200	V
Continuous DC collector current	TC = 100°C, Tvj max = 175°C	IC nom	50	A
Repetitive peak collector current	tP = 1 ms	ICRM	100	A
Total power dissipation	TC = 25°C, Tvj max = 175°C	Ptot	285	W
Gate-emitter peak voltage		VGES	+/-20	V

Characteristic Values

Collector-emitter saturation voltage	IC = 50 A, VGE = 15 V Tvj = 25°C IC = 50 A, VGE = 15 V Tvj = 125°C IC = 50 A, VGE = 15 V Tvj = 150°C	VCE sat		1,85 2,15 2,25	2,15	V VV
Gate threshold voltage	IC = 1,60 mA, VCE = VGE, Tvj = 25°C	VGEth	5,2	5,8	6,4	V
Gate charge	VGE = -15 V ... +15 V	QG		0,38		µC
Internal gate resistor	Tvj = 25°C	RGint		4,0		Ω
Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cies		2,80		nF
Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cres		0,10		nF
Collector-emitter cut-off current	VCE = 1200 V, VGE = 0 V, Tvj = 25°C	ICES			1.0	mA
Gate-emitter leakage current	VCE = 0 V, VGE = 20 V, Tvj = 25°C	IGES			100	nA
Turn-on delay time, inductive load	IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 15 Ω Tvj = 150°C	td on		0,13 0,15 0,15		µs µs µs
Rise time, inductive load	IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 15 Ω Tvj = 150°C	tr		0,02 0,03 0,035		µs µs µs
Turn-off delay time, inductive load	IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 15 Ω Tvj = 150°C	td off		0,30 0,38 0,40		µs µs µs
Fall time, inductive load	IC = 50 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 15 Ω Tvj = 150°C	tf		0,045 0,08 0,09		µs µs µs
Turn-on energy loss per pulse	IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 1300 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 15 Ω Tvj = 150°C	Eon		4,50 6,50 7,50		19,0 30,0 36,0
Turn-off energy loss per pulse	IC = 50 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 3800 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 15 Ω Tvj = 150°C	Eoff		2,50 4,00 4,50		mJ mJ mJ
SC data	VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C	ISC		180		mJ mJ mJ
Thermal resistance, junction to case	IGBT / per IGBT	RthJC			0,53	K/W
Thermal resistance, caseto heatsink	EACH IGBT / per IGBT λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)	RthCH		0,082		K/W
Temperature under switching conditions		Tvj op	-40		150	°C

Product Tags: high power igbt module automotive igbt

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