Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

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Hontai Machinery and equipment (HK) Co. ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-82861683

Contact Person:
Ms.Biona View Contact Details

Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

Brand Name	Infineon
Model Number	FF1200R12IE5
Place of Origin	China
Minimum Order Quantity	1 set
Payment Terms	T/T
Supply Ability	1000sets
Delivery Time	25 days after signing the contract
Packaging Details	Wooden box packing
VCES	1200V
IC nom	1200A
ICRM	2400A

Detailed Product Description

Infineon Technologies Automotive IGBT Modules High power converters FF1200R12IE5 Motor drives

Typical Applications
• High power converters
• Motor drives
• UPS systems

Electrical Features
• Extended operating temperature Tvj op
• High short-circuit capability
• Unbeatable robustness
• Tvj op = 175°C
• Trench IGBT 5

Mechanical Features
• Package with CTI>400
• High power density
• High power and thermal cycling capability
• High creepage and clearance distances

IGBT Inverter
Maximum Rated Values

Collector-emitter voltage	Tvj = 25°C	VCES	1200	V
Continuous DC collector current	TC = 80°C, Tvj max = 175°C	IC nom	1200	A
Repetitive peak collector current	tP = 1 ms	ICRM	2400	A
Gate-emitter peak voltage		VGES	+/-20	V

Characteristic Values min. typ. max.

Collector-emitter saturation voltage	IC = 1200 A, VGE = 15 V Tvj = 25°C IC = 1200 A, VGE = 15 V Tvj = 125°C IC = 1200 A, VGE = 15 V Tvj = 175°C	VCE sat		1,70 2,00 2,15	2,15 2,45 2,60	VVV
Gate threshold voltage	IC = 33,0 mA, VCE = VGE, Tvj = 25°C	VGEth	5,25	5,80	6,35	V
Gate charge	VGE = -15 V ... +15 V, VCE = 600V	QG		5,75		µC
Internal gate resistor	Tvj = 25°C	RGint		0,75		Ω
Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cies		65,5		nF
Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cres		2,60		nF
Collector-emitter cut-off current	VCE = 1200 V, VGE = 0 V, Tvj = 25°C	ICES			5,0	mA
Gate-emitter leakage current	VCE = 0 V, VGE = 20 V, Tvj = 25°C	IGES			400	nA
Turn-on delay time, inductive load	IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 0,82 Ω Tvj = 175°C	td on		0,20 0,23 0,25		µs µs µs
Rise time,inductive load	IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 0,82 Ω Tvj = 175°C	tr		0,16 0,17 0,18		µs µs µs
Turn-off delay time, inductive load	IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 0,82 Ω Tvj = 175°C	td off		0,48 0,52 0,55		µs µs µs
Fall time,inductive load	IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 0,82 Ω Tvj = 175°C	tf		0,08 0,11 0,13		µs µs µs
Turn-on energy loss per pulse	IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, di/dt = 6000 A/µs (Tvj = 175°C) Tvj = 125°C RGon = 0,82 Ω Tvj = 175°C	Eon		80,0 120 160		mJ mJ mJ
Turn-off energy loss per pulse	IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, du/dt = 2800 V/µs (Tvj = 175°C) Tvj = 125°C RGoff = 0,82 Ω Tvj = 175°C	Eoff		130 160 180		mJ mJ mJ
SC data	VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 175°C	ISC		4000		A
Thermal resistance, junction to case	IGBT/per IGBT	RthJC			28,7	K/kW
Thermal resistance,case to heat sink	IGBT/per IGBT λPaste=1W/(m·K)/λgrease=1W/(m·K)	RthCH		22,1		K/kW
Temperature under switching conditions		Tvj op	-40		175	°C

Product Tags: high power igbt module eupec igbt module

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