3BHE006412R0101 | ABB CARD 3BHE006412R0101*ONE YEAR WARRANTY*3BHE006412R01013BHE006412R0101

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General information

ABB 3BHE006412R0101

IGBT (InsulatedGateBipolarTransistor), insulated gate bipolar transistor, is a composite fully controlled

voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor),

and has high input of MOSFET Both the impedance and the low turn-on voltage drop of the GTR. The GTR saturation voltage

is reduced, the current carrying density is large, but the driving current is large; the MOSFET driving power is small, t

he switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. 

For your reference

Minimum order quantity: 1 piece

Type of payment: 100% Payment in Advance

Warranty: one year

Courier partners: DHL, UPS, TNT, FedEx and EMS

Lead time: 2-3 working days

Technical specification, manuals and data sheets: Available on request

To get our best price & fast quotation, pls send us e-mail now.

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join in the industry competition. It is predicted that the total output value of industrial automation in China

will exceed 570 billion yuan in 2022.

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About us​​

MOORE AUTOMATION LIMITED focuse on control systems, from legacy to leading edge.

We have a large inventory of high quality, surplus control system parts. We also distribute many new hardware

and software products to help supporting your existing control systems or utilize the latest control technology.

We have experienced staff, extensive test facilities and we can provide 1-year warranty for all of our surplus parts.

Adequate stock, fast delivery time!!​

Email:miya@mvme.cn

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