STP65NF06 N-Channel Power MOSFET 60V 60A 110W (Tc) Through Hole
Switching application
Description
This Power MOSFET is the latest development of STMicroelectronics
unique “single feature size”™ strip-based process. The resulting
transistor shows extremely high packing density for low
onresistance, rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufacturing
reproducibility.
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
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