MRF151G RF N Channel Transistor Broadband Replacement For BLF278

MRF151G RF Power Field-Effect Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278

Features

1, Guaranteed Performance at 175 MHz, 50 V

2, Output Power — 300 W • Gain — 14 dB (16 dB Typ)

3, Efficiency — 50% • Low Thermal Resistance — 0.35°C/W

4,  Ruggedness Tested at Rated Output Power

5, Nitride Passivated Die for Enhanced Reliability

Description and Applications

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.