China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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ap2344gn h mosfet transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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ap2344gn h mosfet transistor

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OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A General Description The AOD403/AOI403 uses advanced trench technology to ... 2024-12-09 21:52:33
AP12N10D Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide ... 2024-12-09 21:52:33
AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide ... 2024-12-09 19:03:13
AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide ... 2024-12-09 21:52:33
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ... 2024-12-09 18:42:28
HXY4409 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ... 2024-12-09 18:44:10
HXY4407 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ... 2024-12-09 18:44:10
HXY4435 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ... 2024-12-09 18:44:10
HXY4441 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ... 2024-12-09 18:44:10
NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET 2024-12-09 18:45:20
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