China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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ap2344gn h mosfet transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

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ap2344gn h mosfet transistor

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5N60 K-TCQ 5A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, ... 2024-12-09 18:45:20
5N60 K-TCQ 5A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, ... 2024-12-09 21:52:33
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect ... 2024-12-09 18:50:53
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect ... 2024-12-09 21:52:33
SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120mΩ@ 10 V < VGS = RDS(on) < 136mΩ@VGS = 4... 2024-12-09 18:42:28
SOT-23 Plastic-Encapsulate MOSFETS 2N7002 Product Summary ID= 6.0 A VDSS=20v RDS(on) 2024-12-09 18:42:28
60N06HX 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge ... 2024-12-09 18:42:28
SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120mΩ@ 10 V < VGS = RDS(on) < 136mΩ@VGS = 4... 2024-12-09 21:52:33
SOT-23 Plastic-Encapsulate MOSFETS 2N7002 Product Summary ID= 6.0 A VDSS=20v RDS(on) 2024-12-09 21:52:33
60N06HX 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge ... 2024-12-09 21:52:33
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