China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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8a mosfet power transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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8a mosfet power transistor

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...Transistors 2SD965A 2SD965A FEATURE Audio amplifier Flash unit of camera Switching circuit Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise ... 2024-12-09 18:42:28
...Transistors 2SD965A 2SD965A FEATURE Audio amplifier Flash unit of camera Switching circuit Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise ... 2024-12-09 21:52:33
BAW56/BAV70/BAV9 SWITCHING DIODE SOD-123 Plastic-Encapsulate Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications SWITCHING ... 2024-12-09 18:42:28
MMBD4148A/SE/CC/CA SWITCHING DIODE SOT-23 Plastic-Encapsulated Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications High ... 2024-12-09 18:42:28
BAW56/BAV70/BAV9 SWITCHING DIODE SOD-123 Plastic-Encapsulate Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications SWITCHING ... 2024-12-09 21:52:33
MMBD4148A/SE/CC/CA SWITCHING DIODE SOT-23 Plastic-Encapsulated Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications High ... 2024-12-09 21:52:33
...Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ... 2024-12-09 18:42:28
...Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ... 2024-12-09 21:52:33
...MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be ... 2024-12-09 18:42:28
...MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be ... 2024-12-09 21:52:33
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