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2SD965A Silicon Power Transistor Silicon Material Collector Current 600 MA

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

Place of Origin	ShenZhen China
Brand Name	Hua Xuan Yang
Certification	RoHS、SGS
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Packaging Details	Boxed
Delivery Time	1 - 2 Weeks
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Model Number	2SD965A
Collector-Base Voltage	40V
Collector Current -Continuous	5A
Tstg	-55～+150℃
Material	Silicon
Collector Current	600 mA
Storage Temperature	-55～+150℃

Detailed Product Description

SOT-89-3L Plastic-Encapsulate Transistors 2SD965A 2SD965A

FEATURE

Marking :D965A

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-60	V
VCEO	Collector-Emitter Voltage	-60	V
VEBO	Emitter-Base Voltage	-4	V
IC	Collector Current	-500	mA
PC	Collector Power Dissipation	225	mW
RΘJA	Thermal Resistance From Junction To Ambient	556	℃/W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature	-55～+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=0.1mA, I_E=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C= 1mA. I_B=0	30			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 10μA, I_C=0	7			V
Collector cut-off current	ICBO	V_CB= 10V,I_E=0			0.1	μA
Emitter cut-off current	IEBO	V_EB=7V, I_C=0			0.1	μA
DC current gain	hFE(1)	V_CE= 2 V, I_C=1mA		200
	hFE’(2)	V_CE= 2V, I_C = 500mA	230		800
	hFE(3)	V_CE= 2V, I_C =2A	150
Collector-emitter saturation voltage	VCE(sat)	I_C=3A, I_B=0.1A			1	V
Transition frequency	f_T	V_CE=6V, I_C=50mA		150		MHz
Out capacitance	Cob	V_CB=20 V , I_E=0, f=1MH_Z			50	pF

CLASSIFICATION OF h_FE(2)

Rank	Q	R	S
Range	230-380	340-600	560-800

Package Outline Dimensions

SOT-89-3L Tape and Reel

Product Tags: high frequency transistor power switch transistor

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