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TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number C945
VCBO 60V
VCEO 50V
VEBO 5V
Product name silicon semiconductor triode type
Tj 150℃
Case Tape/Tray/Reel
Detailed Product Description

TO-92 Plastic-Encapsulate Transistors C945  TRANSISTOR (NPN)

 

 

FEATURE
 

Ÿ Excellent hFE linearity

Ÿ Low noise

Ÿ Complementary to A733

 

 

MARKING

C945=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE

XXX=Code

 

 

 

 

ORDERING INFORMATION

Part NumberPackagePacking MethodPack Quantity
C945TO-92Bulk1000pcs/Bag
C945-TATO-92Tape2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

SymbolParameterValueUnit
VCBOCollector-Base Voltage60V
V CEOCollector-Emitter Voltage50V
V EBOEmitter-Base Voltage5V
I CCollector Current -Continuous150mA
PCCollector Power Dissipation400mW
TJJunction Temperature150
TstgSt orage Temperature-55~+150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=1mA , IE=060  V
Collector-emitter breakdown voltageV(BR)CEOIC=100μA , IB=050  V
Emitter-base breakdown voltageV(BR)EBOIE=100 μA, IC=05  V
Collector cut-off currentICBOVCB=60V, IE=0  0.1μA
Collector cut-off currentICEOVCE=45V, IB=0  0.1μA
Emitter cut-off currentIEBOVEB=5V ,IC=0  0.1μA

 

DC current gain

hFE(1)VCE=6V , IC=1mA70 700 
 hFE(2)VCE=6V , IC=0.1mA40   
Collector-emitter saturation voltageVCE(sat)IC=100mA, IB=10mA  0.3V
Base-emitter saturation voltageVBE(sat)IC=100mA, IB=10mA  1V
Transition frequencyfTVCE=6V,IC=10mA,f=30MHz200  MHz
Collector output capacitanceCobVCB=10V,IE=0,f=1MHz  3.0pF

 

Noise figure

 

NF

VCE=6V,IC=0.1mA

RG=10kΩ,f=1MHz

  

 

10

 

dB

 
  

CLASSIFICATION OF hFE(2)

RankOYGRBL
Range70-140120-240200-400350-700

 

 

 

 

Typical Characteristics

 


 
 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A3.3003.7000.1300.146
A11.1001.4000.0430.055
b0.3800.5500.0150.022
c0.3600.5100.0140.020
D4.3004.7000.1690.185
D13.430 0.135 
E4.3004.7000.1690.185
e1.270 TYP0.050 TYP
e12.4402.6400.0960.104
L14.10014.5000.5550.571
0 1.600 0.063
h0.0000.3800.0000.015

 

 

Product Tags: tip pnp transistor   high power pnp transistor  
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