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2N5551 Tip Power Transistors For Electronic Components VCBO 180V

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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2N5551 Tip Power Transistors For Electronic Components VCBO 180V

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number 2N5551
VCBO 180V
VCEO 160V
VEBO 6V
Usage Electronic Components
Tj 150℃
Case Tape/Tray/Reel
Detailed Product Description

TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR (NPN)

 

 

FEATURE
 

Ÿ General Purpose Switching Application

 

 

MARKING

 

2N5551=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE

 

 

 

ORDERING INFORMATION

Part NumberPacking MethodPack Quantity
2N5551Bulk1000pcs/Bag
2N5551-TATape2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

SymbolParameterValueUnit
VCBOCollector-Base Voltage180V
VCEOCollector-Emitter Voltage160V
VEBOEmitter-Base Voltage6V
ICCollector Current0.6A
PCCollector Power Dissipation625mW
R0 JAThermal Resistance From Junction To Ambient200Š /W
TjJunction Temperature150Š
TstgStorage Temperature-55~+150Š

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified

 

 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=100μA,IE=0180  V
Collector-emitter breakdown voltageV(BR)CEO*IC=1mA,IB=0160  V
Emitter-base breakdown voltageV(BR)EBOIE=10μA,IC=06  V
Collector cut-off currentICBOVCB=120V,IE=0  50nA
Emitter cut-off currentIEBOVEB=4V,IC=0  50nA

 

DC current gain

hFE(1)VCE=5V, IC=1mA80   
 hFE(2)VCE=5V, IC=10mA100 300 
 hFE(3)VCE=5V, IC=50mA50   
Collector-emitter saturation voltageVCE(sat)˄1˅IC=10mA,IB=1mA  0.15V
 VCE(sat)˄2˅IC=50mA,IB=5mA  0.2V
Base-emitter saturation voltageVBE (sat)˄1˅IC=10mA,IB=1mA  1V
 VBE (sat)˄2˅IC=50mA,IB=5mA  1V
Collector output capacitanceCobVCB=10V,IE=0, f=1MHz  6pF
Emitter input capacitanceCibVBE=0.5V,IC=0, f=1MHz  20pF
Transition frequencyfTVCE=10V,IC=10mA, f=100MHz100 300MHz

 
  

CLASSIFICATION OF hFE(2)

RANKABC
RANGE100-150150-200200-300

 

 

 

 

Typical Characteristics

 


 

 

 

 

 


 
 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A3.3003.7000.1300.146
A11.1001.4000.0430.055
b0.3800.5500.0150.022
c0.3600.5100.0140.020
D4.3004.7000.1690.185
D13.430 0.135 
E4.3004.7000.1690.185
e1.270 TYP0.050 TYP
e12.4402.6400.0960.104
L14.10014.5000.5550.571
0 1.600 0.063
h0.0000.3800.0000.015

 

 

Product Tags: tip pnp transistor   tip series transistors  
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