China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
7
Home > Products > Dual Channel Mosfet >

FR301 THRU FR307 Dual Channel Mosfet Forward Current - 3.0 Amperes

Browse Categories

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
View Contact Details

FR301 THRU FR307 Dual Channel Mosfet Forward Current - 3.0 Amperes

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number FR301 THRU FR307
Type SWITCHING DIODESOD
FEATURE Low reverse leakage
Terminals Plated axial leads, solderable per MIL-STD-750,
Weight 0.04 ounce, 1.10 grams
Product ID FR301 THRU FR307
Case JEDEC DO-41 molded plastic body
Detailed Product Description

FR301 THRU FR307 FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes


 

FEATURE
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
 
 
 
MECHANICAL DATA
 
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.04 ounce, 1.10 grams
 
 
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

 

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
 
 
 
Note:
1. Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounte
 
 
RATINGS AND CHARACTERISTIC CURVES 1N4942 THRU 1N4948
 
 
Product Tags: dual gate mosfet   high speed mosfet  
Related Products
Email to this supplier
 
From:
Enter your Email please.
To: Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Subject:
Message:
Characters Remaining: (80/3000)