HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated
Products Detailed
HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic EncapsulatedSOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120mΩ@ 10 V < VGS = RDS(on) < 136mΩ@VGS = 4... |
| [View Products Detailed] |
| Product Tags: high current transistor logic mosfet switch |
Related Products
|
60N06HX 60V Mos Field Effect Transistor N Channel Enhancement Mode MOSFET |
|
60N03PIT 30V N Channel Mosfet Transistor , High Power Transistor |
|
50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃ |
|
G40N10 100V Mosfet Power Transistor , N Channel Transistor Fast Switching |
|
18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application |
|
2N7002 Enhancement Mode Field Effect Transistor VDSS 20v ID 6.0 A |
Email to this supplier