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SOT-23 MMBTA44 NPN Silicon Power Transistor Collector Current 600 MA

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

Place of Origin	ShenZhen China
Brand Name	Hua Xuan Yang
Certification	RoHS、SGS
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Packaging Details	Boxed
Delivery Time	1 - 2 Weeks
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Model Number	MMBTA44
Junction Temperature	150 ℃
Type	Triode Transistor
Application	mobile power supply/ led driver/motor control
Material	Silicon
Collector Current	600 mA
Storage Temperature	-55～+150℃

Detailed Product Description

SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN)

FEATURE

Switching Transistor

Marking :2X

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	60	V
VCEO	Collector-Emitter Voltage	40	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current	600	mA
P_C	Collector Power Dissipation	300	mW
RΘJA	Thermal Resistance From Junction To Ambient	417	℃/W
T_j	Junction Temperature	150	℃
Tstg	Storage Temperature	-55～+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100μA,I_E=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=1mA,I_B=0	40			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=100μA ,I_C=0	6			V
Collector cut-off current	ICBO	V_CB=50V,I_E=0			0.1	μA
Collector cut-off current	ICEX	VCE=35V, VEB=0.4V			0.1	μA
Emitter cut-off current	IEBO	V_EB=5V,I_C=0			0.1	μA
DC current gain	hFE1	V_CE=1V, I_C=0.1mA	20
	hFE2	V_CE=1V, I_C=1mA	40
	hFE3	V_CE=1V, I_C=10mA	80
	hFE4	V_CE=1V, I_C=150mA	100		300
	hFE5	V_CE=2V, I_C=500mA	40
Collector-emitter saturation voltage	VCE(sat)	I_C=150mA,I_B=15mA			0.4	V
		I_C=500mA,I_B=50mA			0.75	V
Base-emitter saturation voltage	VBE(sat)	I_C=150mA,I_B=15mA			0.95	V
		I_C=500mA,I_B=50mA			1.2	V
Transition frequency	f_T	V_CE=10V, I_C=20mA,f =100MHz	250			MHz
Delay time	t_d	VCC=30V, VBE(off)=-2V IC=150mA , IB1=15mA			15	ns
Rise time	t_r				20	ns
Storage time	t_s	VCC=30V, IC=150mA IB1=IB2=15mA			225	ns
Fall time	t_f				60	ns

Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.

Typical Characterisitics

Package Outline Dimensions

Product Tags: power switch transistor power mosfet transistors

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