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FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

Detailed Product Description

SOT-23 Plastic-Encapsulate Transistors FMMT591 TRANSISTOR (PNP)

FEATURE

Low equivalent on-resistance

Marking :591

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-80	V
VCEO	Collector-Emitter Voltage	-60	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current	-1	A
ICM	Peak Pulse Current	-2	A
PC	Collector Power Dissipation	250	mW
RΘJA	Thermal Resistance From Junction To Ambient	500	℃/W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature	-55～+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-100μA, I_E=0	-80			V
Collector-emitter breakdown voltage	V(BR)CEO1	I_C=-10mA, I_B=0	-60			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=-100μA, I_C=0	-5			V
Collector cut-off current	ICBO	V_CB=-60V, I_E=0			-0.1	μA
Emitter cut-off current	IEBO	V_EB=-4V, I_C=0			-0.1	μA
DC current gain	hFE(1)	V_CE=-5V, I_C=-1mA	100
	hFE(2) 1	V_CE=-5V, I_C=-500mA	100		300
	hFE(3) 1	V_CE=-5V, I_C=-1A	80
	hFE(4) 1	V_CE=-5V, I_C=-2A	15
Collector-emitter saturation voltage	VCE(sat)1 1	I_C=-500mA, I_B=-50mA			-0.3	V
	VCE(sat)2 1	I_C=-1A, I_B=-100mA			-0.6	V
Base-emitter saturation voltage	VBE(sat) 1	I_C=-1A, I_B=-100mA			-1.2	V
Base-emitter voltage	1 VBE	V_CE=-5V, I_C=-1A			-1	V
Transition frequency	fT	V_CE=-10V,I_C=-50mA,,f=100MHz	150			MHz
Collector output capacitance	Cob	V_CB=-10V,f=1MHz			10	pF

Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.

Typical Characterisitics

Package Outline Dimensions

Product Tags: high frequency transistor power mosfet transistors

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