China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

A42 Silicon NPN Power Transistors , NPN Power Transistor High Current
Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number A42
Collector-Base Voltage 310V
Emitter-Base Voltage 5V
Tstg -55～+150℃
Material Silicon
Collector Current 600 mA
Detailed Product Description

SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN)

 

 

FEATURE
 

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

 

Marking :D965A

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

SymbolParameterValueUnit
VCBOCollector-Base Voltage310V
VCEOCollector-Emitter Voltage305V
VEBOEmitter-Base Voltage5V
ICCollector Current -Continuous200mA
ICMCollector Current -Pulsed500mA
PCCollector Power Dissipation500mW
RθJAThermal Resistance from Junction to Ambient250℃/W
TJJunction Temperature150℃
TstgStorage Temperature-55~+150℃

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=100µA,IE=0310  V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA,IB=0305  V
Emitter-base breakdown voltageV(BR)EBOIE=100µA,IC=05  V

 

Collector cut-off current

ICBOVCB=200V,IE=0  0.25µA
 

 

ICEX

VCE=100V,VX=5V  5µA
  VCE=300V,VX=5V  10µA
Emitter cut-off currentIEBOVEB=5V,IC=0  0.1µA

 

DC current gain

hFE(1)VCE=10V, IC=1mA60   
 hFE(2)VCE=10V, IC=10mA100 300 
 hFE(3)VCE=10V, IC=30mA75   
Collector-emitter saturation voltageVCE(sat)IC=20mA,IB=2mA  0.2V
Base-emitter saturation voltageVBE(sat)IC=20mA,IB=2mA  0.9V
Transition frequencyfTVCE=20V,IC=10mA, f=30MHz50  MHz

 

 

 
 

 Typical Characteristics

 

 

 

 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A1.4001.6000.0550.063
b0.3200.5200.0130.020
b10.4000.5800.0160.023
c0.3500.4400.0140.017
D4.4004.6000.1730.181
D11.550 REF.0.061 REF.
E2.3002.6000.0910.102
E13.9404.2500.1550.167
e1.500 TYP.0.060 TYP.
e13.000 TYP.0.118 TYP.
L0.9001.2000.0350.047

 
 

 

 

SOT-89-3L Suggested Pad Layout

 


 
 
SOT-89-3L Tape and Reel



 
 
 
Product Tags: high frequency transistor   power mosfet transistors  
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