China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number B772
Collector Power Dissipation 1.25W
VCEO -30V
VEBO -6V
Product name semiconductor triode type
Tj 150℃
Type Triode Transistor
Detailed Product Description

TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP)

 

 

FEATURE
 


Low Speed Switching

 

 

MARKING

B772=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

 

 

 

ORDERING INFORMATION

Part NumberPackagePacking MethodPack Quantity
B772TO-126Bulk200pcs/Bag
B772-TUTO-126Tube60pcs/Tube


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

SymbolParameterValueUnit
VCBOCollector-Base Voltage-40V
VCEOCollector-Emitter Voltage-30V
VEBOEmitter-Base Voltage-6V
ICCollector Current -Continuous-3A
PCCollector Power Dissipation1.25W
RӨJAThermal Resistance from Junction to Ambient100℃/W
TjJunction Temperature150
TstgStorage Temperature-55-150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-100μA ,IE=0-40  V
Collector-emitter breakdown voltageV(BR)CEOIC= -10mA , IB=0-30  V
Emitter-base breakdown voltageV(BR)EBOIE= -100μA,IC=0-6  V
Collector cut-off currentICBOVCB= -40V, IE=0  -1μA
Collector cut-off currentICEOVCE=-30V, IB=0  -10μA
Emitter cut-off currentIEBOVEB=-6V, IC=0  -1μA
DC current gainhFEVCE= -2V, IC= -1A60 400 
Collector-emitter saturation voltageVCE(sat)IC=-2A, IB= -0.2A  -0.5V
Base-emitter saturation voltageVBE(sat)IC=-2A, IB= -0.2A  -1.5V

 

Transition frequency

fT

VCE= -5V, IC=-0.1A

f =10MHz

 

50

 

80

 

 

MHz

 
  

CLASSIFICATION OF hFE(2)

RankROYGR
Range60-120100-200160-320200-400

 

 

 


Typical Characteristics

 

 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A3.3003.7000.1300.146
A11.1001.4000.0430.055
b0.3800.5500.0150.022
c0.3600.5100.0140.020
D4.3004.7000.1690.185
D13.430 0.135 
E4.3004.7000.1690.185
e1.270 TYP0.050 TYP
e12.4402.6400.0960.104
L14.10014.5000.5550.571
0 1.600 0.063
h0.0000.3800.0000.015

 

 

 

 

Product Tags: tip pnp transistor   high power pnp transistor  
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