China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
7
Home > Products > Tip Power Transistors >

A92 PNP Transistor Switch High Speed Switching Surface Mount +

Browse Categories

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
View Contact Details

A92 PNP Transistor Switch High Speed Switching Surface Mount +

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number A92
VCBO - 310V
VCEO - 305V
VEBO -5V
Product name silicon semiconductor triode type
Tj 150℃
Case Tape/Tray/Reel
Detailed Product Description

TO-92 Plastic-Encapsulate Transistors A92 TRANSISTOR (PNP)

 

 

FEATURE
 

High voltage

 

 

MARKING

  • A92=Device code
  • Solid dot=Green molding compound device, if none,the normal device
  • Z=Rank of hFE
  • XXX=Code

 

 

 

ORDERING INFORMATION

Part NumberPackagePacking MethodPack Quantity
A92TO-92Bulk1000pcs/Bag
A92-TATO-92Tape2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

SymbolParameterValueUnits
VCBOCollector-Base Voltage- 310V
VCEOCollector-Emitter Voltage- 305V
VEBOEmitter-Base Voltage-5V
ICCollector Current -Continuous- 200mA
ICMCollector Current - Pulsed-500mA
PCCollector Power Dissipation625mW
TjJunction Temperature150
TstgSt orage Temperature-55~150
RӨJAThermal Resistance, Junction to Ambient200℃ /mW
RӨJCThermal Resistance,Junction to Case83.3℃ /mW

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-100uA, IE=0-310  V
Collector-emitter breakdown voltageV(BR)CEOIC=-1mA, IB=0-305  V
Emitter-base breakdown voltageV(BR)EBOIE=-100μA, IC=0-5  V
Collector cut-off currentICBOVCB= -200 V IE=0  -0.25μA
Emitter cut-off currentIEBOVEB= -5 V, IC=0  -0.1μA

 

 

DC current gain

hFE(1)VCE= -10 V, IC=- 1 mA60   
 hFE(2)VCE= -10V, IC = -10 mA80 250 
 hFE(3)VCE= -10 V, IC= -80 mA60   
Collector-emitter saturation voltageVCE(sat)IC= -20 mA, IB= -2 mA  -0.2V
Base-emitter saturation voltageVBE(sat)IC= -20 mA, IB= -2 mA  -0.9V
Transition frequencyfTVCE= -20 V, IC= -10 mA f = 30MHz50  MHz

 
  

CLASSIFICATION OF hFE(2)

RankABC
Range80-100100- 200200-250

 

 

 

 

Typical Characteristics

 

 

 

 

 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A3.3003.7000.1300.146
A11.1001.4000.0430.055
b0.3800.5500.0150.022
c0.3600.5100.0140.020
D4.3004.7000.1690.185
D13.430 0.135 
E4.3004.7000.1690.185
e1.270 TYP0.050 TYP
e12.4402.6400.0960.104
L14.10014.5000.5550.571
0 1.600 0.063
h0.0000.3800.0000.015

 

 

Product Tags: tip pnp transistor   tip series transistors  
Related Products
Email to this supplier
 
From:
Enter your Email please.
To: Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Subject:
Message:
Characters Remaining: (80/3000)