China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number M28S
VCBO 40V
VCEO 20V
PD 625mW
Product name semiconductor triode type
Tstg -55 ~+150Š
Power Mosfet Transistor TO-92 Plastic-Encapsulate
Detailed Product Description

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP)

 

 

FEATURE

 

Ÿ High DC Current Gain and Large Current Capability

 

 

MARKING

M28S=Device code

Solid dot=Green molding compound device,

 

if none,the normal device

Z=Rank of hFE, XXX=Code

 

 

 

 

ORDERING INFORMATION

Part NumberPackagePacking MethodPack Quantity
M28STO-92Bulk1000pcs/Bag
M28S-TATO-92Tape2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

SymbolPara meterValueUnit
VCBOCollector-Base Voltage40V
VCEOCollector-Emitter Voltage20V
VEBOEmitter-Base Voltage6V
ICCollector Current -Continuous1A
PDCollector Power Dissipation625mW
R0 JAThermal Resist ance f rom Junction to Ambient200Š / W
TjJunction Temperature150Š
TstgStorage Temperature-55 ~+150Š

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC= 0.1mA ,IE=040  V
Collector-emitter breakdown voltageV(BR) CEOIC=1mA,IB=020  V
Emitter-base breakdown voltageV(BR)EBOIE=0.1mA,IC=06  V
Collector cut-off currentICBOVCB=40V,IE=0  1µA
Collector cut-off currentICEOVCE=20V,IB=0  5µA
Emitter cut-off currentIEBOVEB=5V,IC=0  0.1µA

 

 

DC current gain

hFE(1)VCE=1V, IC=1mA290   
 hFE(2)VCE=1V, IC=100mA300 1000 
 hFE(3)VCE=10V, IC=300mA300   
 hFE(4)VCE=1V, IC=500mA300   
Collector-emitter saturation voltageVCE(sat)IC=600mA,IB=20mA  0.55V
Transition frequencyfTVCE=10V,IE=50mA ,f=30MHz100  MHz

 
  

CLASSIFICATION OF hFE(2)

RANKBCD
RANGE300-550500-700650-1000

 

 

 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A3.3003.7000.1300.146
A11.1001.4000.0430.055
b0.3800.5500.0150.022
c0.3600.5100.0140.020
D4.3004.7000.1690.185
D13.430 0.135 
E4.3004.7000.1690.185
e1.270 TYP0.050 TYP
e12.4402.6400.0960.104
L14.10014.5000.5550.571
0 1.600 0.063
h0.0000.3800.0000.015

 

 

Product Tags: tip pnp transistor   tip series transistors  
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