Hauni Max Super Slim Kretek Packing Units Switch Irfz44nl
Transistor
A transistor is a semiconductor device used to amplify or switch
electronic signals and electrical power. Transistors are one of the
basic building blocks of modern electronics. It is composed of
semiconductor material usually with at least three terminals for
connection to an external circuit.
IRFZ44NS/LPbF
| | Parameter | Min. |
| V(BR)DSS | Drain-to-Source Breakdown Voltage | 55 |
| △V(BR)DSS 仏 Tj | Breakdown Voltage Temp. Coefficient | — |
| RDS(on) | Static Drain-to-Source On-Resistance | — |
| VGS(th) | Gate Threshold Voltage | 2.0 |
| gts | Forward Transconductance | 19 |
| bss | Drain-to-Source Leakage Current | — |
| — |
| loss | Gate-to-Source Forward Leakage | — |
| Gate-to-Source Reverse Leakage | — |
| Qg | Total Gate Charge | — |
| Qgs | Gate-to-Source Charge | — |
| Qgd | Gate-to-Drain ("Miller") Charge | — |
| td(on) | Turn-On Delay Time | — |
| tr | Rise Time | — |
| td(off) | Turn-Off Delay Time | — |
| tf | Fall Time | — |
| Ls | Internal Source Inductance | — |
| Cjss | Input Capacitance | — |
| Coss | Output Capacitance | — |
| Crss | Reverse Transfer Capacitance | — |
| Eas | Single Pulse Avalanche Energy® | — |
Vacuum Tube
Compared with the vacuum tube, transistors are generally smaller
and require less power to operate. Certain vacuum tubes have
advantages over transistors at very high operating frequencies or
high operating voltages. Many types of transistors are made to
standardized specifications by multiple manufacturers.
Source-Drain Ratings and Characteristics
| | Parameter | Typ- | Max. |
| Is | Continuous Source Current (Body Diode) | — | 49 |
| Ism | Pulsed Source Current (Body Diode)① | — | 160 |
| VsD | Diode Forward Voltage | — | 1.3 |
| trr | Reverse Recovery Time | 63 | 95 |
| Qrr | Reverse Recovery Charge | 170 | 260 |
