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SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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Sapphire Wafer With Metallization Circuit Board

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

Contact Person:
Mr.Wang
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Sapphire Wafer With Metallization Circuit Board

Brand Name ZMKJ
Place of Origin China
Minimum Order Quantity 5pcs
Price by case
Payment Terms T/T, Western Union, paypal
Supply Ability 50pcs/month
Delivery Time in 30days
Packaging Details single wafer container in cleaning room
substrate sapphire wafer with metallization
layer Sapphire template
layer thickness 1-5um
conductivity type N/P
Orientation 0001
application high power/high frequency electronic devices
application 2 5G saw/BAW Devices
silicon thickness 525um/625um/725um
Detailed Product Description

2inch 4inch 4" Sapphire based GaN templates GaN film on sapphire substrate

 

Properties of GaN

 

Chemical properties of GaN

1) At room temperature, GaN is insoluble in water, acid and alkali.

2)Dissolved in a hot alkaline solution at a very slow rate.

3) NaOH, H2SO4 and H3PO4 can quickly corrode the poor quality of GaN, can be used for these poor quality GaN crystal defect detection.

4) GaN in the HCL or hydrogen, at high temperature presents unstable characteristics.

5) GaN is the most stable under nitrogen.

Electrical properties of GaN

1) The electrical properties of GaN are the most important factors affecting the device.

2) The GaN with no doping was n in all the cases, and the electron concentration of the best sample was about 4*(10^16)/c㎡.

3) Generally, the prepared P samples are highly compensated.

Optical properties of GaN

1) Wide band gap compound semiconductor material with high band width (2.3~6.2eV), can cover the red yellow green, blue, violet and ultraviolet spectrum, so far is that any other semiconductor materials are unable to achieve.

2) Mainly used in blue and violet light emitting device.

Properties of GaN Material

1) High frequency property, arrive at 300G Hz. (Si is 10G & GaAs is 80G)

2) High temperature property, Normal work at 300℃, very suitable for aerospace, military and other high temperature environment.

3) The electron drift has high saturation velocity, low dielectric constant and good thermal conductivity.

4) Acid and alkali resistance, corrosion resistance, can be used in harsh environment.

5) High voltage characteristics, impact resistance, high reliability.

6) Large power, the communication equipment is very eager.

 
Application of GaN

Main usage of GaN:

1) light emitting diodes, LED

2) field effect transistors, FET

3) laser diodes, LD

 
                             Specification 
 
Caracteristic Specification

 

Other relaterd  4INCH  GaN Template Specification 

 

 GaN/ Al₂O₃ Substrates (4") 4inch 
Item Un-dopedN-type

High-doped

N-type

Size  (mm)Φ100.0±0.5 (4")
Substrate StructureGaN on Sapphire(0001)
SurfaceFinished (Standard: SSP Option: DSP)
Thickness (μm)4.5±0.5; 20±2;Customized
Conduction Type Un-dopedN-typeHigh-doped N-type
Resistivity  (Ω·cm)(300K)≤0.5≤0.05≤0.01
GaN Thickness Uniformity
 
≤±10% (4")
Dislocation Density (cm-2)
 
≤5×108
Useable Surface Area>90%
Package Packaged in a class 100 clean room environment.
 

Crystal structure

Wurtzite

Lattice constant (Å)a=3.112, c=4.982
Conduction band typeDirect bandgap
Density (g/cm3)3.23
Surface microhardness (Knoop test)800
Melting point (℃)2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)320
Band gap energy (eV)6.28
Electron mobility (V·s/cm2)1100
Electric breakdown field (MV/cm)11.7

Product Tags: Sapphire Wafer Circuit Board   Metallization Sapphire Wafer   Sapphire Semiconductor Substrate  
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