4 Inch Sapphire Gallium Nitride Wafer 5um AlN Template
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2inch 4inch AlN-on-Sapphire Epi-wafer 1-5um AlN template 8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED for RF application
GaN Wafer Characteristic
Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.
Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared. Application GaN can be used in many areas such as LED display, High-energy
Detection and Imaging,
Related Gan-on-si epi-wafers
For Power Application
Product specification
For RF Application
Prodcut Specification
For LED Application
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Product Tags: Sapphire Aluminum Nitride Wafer AlN Gallium Arsenide Wafer Gallium Nitride LED Wafer |
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2Inch 4inch free-standing GaN Gallium Nitride Wafer |
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5um Thickness AlN Aluminum Nitride Template 430um Sapphire 350um Sic Substrates |
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2 4 Inch 4-5 Um III Gallium Nitride Wafer 0.43 Mm Sapphire Sic Substrates |
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III - Nitride 2 INCH Free Standing GaN Wafer For Laser Projection Display Power Device |
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2inch 4inch GaN-based Blue Green LED Grown On Flat Or PPS Sapphire MOCVD DSP SSP |
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8inch GaN-on-Si Epitaxy Wafer 110 111 110 N Type P Type Customization Semiconductor RF LED |