Customized Size 5x10mm M Axis Free Standing HVPE Gallium Nitride Wafer
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) customized size 5x10mm m-axis free-standing HVPE GaN substrate wafe
GaN Wafer Characteristic
Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.
Forbidden band width (light emitting and absorption) cover the ultraviolet, visible light and infrared.
Applications GaN can be used in many areas such as LED display, High-energy
Detection and Imaging,
Free-Standing GaN Substrates Specification Our Factroy Enterprise Vision High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life and high stability LDs, high power and high reliability micro-wave
devices, High brightness
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Product Tags: HVPE Gallium Nitride Wafer M Axis Gallium Nitride Wafer M Axis gan wafer |
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