China Sapphire Substrate manufacturer
SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
7
Home > Products > Gallium Nitride Wafer >

5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial

Browse Categories

SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

Contact Person:
Mr.Wang
View Contact Details

5x5/10x10 Mm Gallium Nitride Wafer HVPE Free Standing Chip Template Industrial

Brand Name zmkj
Model Number GaN-FS-C-U-C50-SSP
Place of Origin CHINA
Minimum Order Quantity 10pcs
Price 1200~2500usd/pc
Payment Terms T/T
Supply Ability 50pcs per month
Delivery Time 1-5weeks
Packaging Details single wafer case by vacuum package
Material GaN single crystal
size 10x10/5x5/20x20mmt
thickness 0.35mm
type N-type
Application semiconductor Device
Detailed Product Description

2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane)

 

GaN Wafer Characteristic

ProductGallium nitride (GaN) substrates
Product Description:

Saphhire GaN template is presented Epitxial hydride vapor phase epitaxy (HVPE) method. In the HVPE process,

the acid produced by the reaction GaCl, which is in turn reacted with ammonia to produce gallium nitride melt. Epitaxial GaN template is a cost-effective way to replace gallium nitride single crystal substrate.

Technical parameters:
Size2 "round; 50mm ± 2mm
Product PositioningC-axis <0001> ± 1.0.
Conductivity typeN-type & P-type
ResistivityR <0.5Ohm-cm
Surface treatment (Ga face)AS Grown
RMS<1nm
Available surface area> 90%
Specifications:

 

GaN epitaxial film (C Plane), N-type, 2 "* 30 microns, sapphire;

GaN epitaxial film (C Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (R Plane), N-type, 2 "* 5 microns sapphire;

GaN epitaxial film (M Plane), N-type, 2 "* 5 microns sapphire.

AL2O3 + GaN film (N-type doped Si); AL2O3 + GaN film (P-type doped Mg)

Note: according to customer demand special plug orientation and size.

Standard Packaging:1000 clean room, 100 clean bag or single box packaging
 

 

Application

GaN can be used in many areas such as LED display, High-energy Detection and Imaging,
Laser Projection Display, Power Device, etc.

  • Laser Projection Display, Power Device, etc.
  • Date storage
  • Energy-efficient lighting
  • Full color fla display
  • Laser Projecttions
  • High- Efficiency Electronic devices
  • High- Frequency Microwave Devices
  • High-energy Detection and imagine
  • New energy solor hydrogen technology
  • Environment Detection and biological medicine
  • Light source terahertz band


Specifications:

 Non-Polar Freestanding GaN Substrates(a-plane and m-plane)
ItemGaN-FS-aGaN-FS-m
Dimensions5.0mm×5.5mm
5.0mm×10.0mm
5.0mm×20.0mm
Customized Size
Thickness350 ± 25 µm
Orientationa-plane ± 1°m-plane ± 1°
TTV≤15 µm
BOW≤20 µm
Conduction TypeN-type
Resistivity(300K)< 0.5 Ω·cm
Dislocation DensityLess than 5x106 cm-2
Useable Surface Area> 90%
PolishingFront Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
PackagePackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

 

 


 

 

Q&A

 

Q:What is a GaN wafer?

A:A GaN wafer (gallium nitride wafer) is a thin, flat substrate made from gallium nitride, a wide-bandgap semiconductor material that is widely used in high-performance electronics. GaN wafers are the foundation for manufacturing electronic devices, particularly for applications requiring high power, high frequency, and high efficiency. This material is especially important in industries such as power electronics, telecommunications, and LED lighting.

 

 

Q:Why is GaN better than silicon?

A:GaN (gallium nitride) is better than silicon in many high-performance applications due to its wide bandgap (3.4 eV compared to silicon's 1.1 eV), enabling GaN devices to operate at higher voltages, temperatures, and frequencies. GaN's high efficiency leads to lower heat generation and reduced energy loss, making it ideal for power electronics, fast-charging systems, and high-frequency applications. Additionally, GaN has better thermal conductivity, allowing devices to run more efficiently in demanding conditions. As a result, GaN-based devices are more compact, energy-efficient, and reliable than their silicon counterparts.

 

 

 

 



 

 

Key words:#GaN #GalliumNitride #PowerElectronics #HighPerformance #Efficiency #LED #LaserProjection #EnergyEfficientLighting #HighFrequencyDevices #NonPolarGaN #FreestandingGaN #GaNSubstrates #MOCVD

Product Tags: gan wafer   gallium phosphide wafers  
Related Products
Email to this supplier
 
From:
Enter your Email please.
To: SHANGHAI FAMOUS TRADE CO.,LTD
Subject:
Message:
Characters Remaining: (80/3000)