High Purity Tungsten Ion Implantation Components Description
Because tungsten material has the advantages of high density, high
melting point, stable high temperature chemical properties, small
thermal denaturation, good thermal conductivity and long service
life, it has become the first choice for ion sources and
consumables for ion implanters in the semiconductor industry. High
Purity Tungsten Ion Implantation Components are made of tungsten or
tungsten alloy materials through powder metallurgy process, with
outstanding corrosion resistance and oxidation resistance, high
thermal and electrical conductivity, high strength and hardness,
and extremely low vapor pressure. The advantages of good creep
resistance and wear resistance ensure the accuracy and purity of
ion implantation. High Purity Tungsten Ion Implantation Components
are mainly used for ion implantation processes in semiconductor,
metal processing, ceramics and other industries, and can be widely
used in aerospace, scientific experiments, metal processing, high
temperature furnace, sapphire refining industry and ceramic
industry.
High Purity Tungsten Ion Implantation
Components Specifications:
Grade | WMo,WNiFe |
Technique | Rolling,Forging,Flattening,Annealing,Machining |
Melting Point | 3410℃ |
Purity | ≥95% |
Size and Shape | According to drawings |
Maximum Outside Diameter | 800mm |
Density | 19.3g/cm3 |
Surface | Polishing,Chemical Cleaning,Powder coating, etc. |
Standard | ASTM B777,DIN,GB,ISO,JIS |
Certification | ISO900 |
High Purity Tungsten Ion Implantation Components Picture