China FFP2 Dust Mask manufacturer
Shenzhen Quanyuantong Electronics Co., Ltd.
Shenzhen Quanyuantong Electronics Co., Ltd.
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G4PC40UD IRG4PC40UDPBF IGBT MOSFET Transistor 600V 40A 160W

G4PC40UD IRG4PC40UDPBF IGBT MOSFET Transistor 600V 40A 160W

Place of Origin US
Brand Name Original
Model Number IRG4PC40UDPBF
Supply Ability 859000PCS/Day
Packaging Details Box/Reel/Tube
Minimum Order Quantity 10
Price $1.50 - $2.65 / Piece
Delivery Time 1-7 days
Payment Terms T/T, Western Union, Paypal,Alibaba trade order
Supplier Type Original manufacturer, Agency, Retailer
Media Available datasheet
Package Type Throught Hole
Brand IGBT 600V 40A 160W TO247AC
Current - Collector (Ic) (Max) 40A
Voltage - Collector Emitter Breakdown (Max) 600V
Power - Max 160W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Type Field-Effect Transistor
Package TO-247
Shipping by DHL\UPS\Fedex\EMS\HK Post
Packing Tube&Reel&Tray
Port HK/SHENZHEN
Detailed Product Description
Product Description

Product Detail

 


PackagingBulk  
Part StatusLast Time Buy 
Voltage - Collector Emitter Breakdown (Max)600V 
Current - Collector (Ic) (Max)40A 
Current - Collector Pulsed (Icm)160A 
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 20A 
Power - Max160W 
Switching Energy710µJ (on), 350µJ (off) 
Input TypeStandard 
Gate Charge100nC 
Td (on/off) @ 25°C54ns/110ns 
Test Condition480V, 20A, 10Ohm, 15V 
Reverse Recovery Time (trr)42ns 
Operating Temperature-55°C ~ 150°C (TJ) 
Mounting TypeThrough Hole 
Package / CaseTO-247-3

 


 

  

 


1. Stock,Order goods or Manufacturing welcome.

2. Sample order.

3. We will reply you for your inquiry in 24 hours.

4. After sending, we will track the products for you once every two days, until you get the products.

5. When you got the goods, test them, and give me a feedback.If you have any problem 

             contact us, we will solve for you.    

Product Tags: IRG4PC40UDPBF IGBT MOSFET Transistor   G4PC40UD IGBT MOSFET Transistor   160W Datasheet Mosfet Transistor  
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