High Performance Ion Source Head Tungsten and Molybdenum Customized Components

High Performance Ion Source Head Tungsten and Molybdenum Customized Components

Tungsten and Molybdenum Machined Parts Specification:

Application:

Semiconductor ion implantation is a new technology of material surface modification. It has been widely used in the doping of semiconductor materials, the surface modification of metals, ceramics, polymers etc. It is a necessary technique in the contemporary manufacturing large scale integrated circuit.

Material Property:

Sanhui tungsten and molybdenum components used in ion implantation have high purity, good mechanical properties to ensure they are suitable for the processing of arc chamber components with complex shapes.

High purity tungsten and molybdenum arc chamber is the basic guarantee for semiconductor chip yield. 

Success Cases:

Sanhui is equipped with complete equipment for processing refractory materials, and can provide customers with plates, sheets, bars, rods and complex components made from refractory metal materials such as tungsten, molybdenum, tantalum, niobium and their alloys.

Sanhui is able to provide tungsten and molybdenum products used in large-beam, medium-beam and high-energy ion sources; able to provide tungsten high-energy ion source components, tungsten or molybdenum large-beam ion implantation parts, and molybdenum medium-beam ion source components.

The products have been supplied to leading manufacturers in Taiwan, the United States and other countries and regions.