China Sic Heating Elements manufacturer
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
6
Home > Products > Technical Ceramic Parts >

Optoelectronic Device SiC Wafer for Light Emitting Diodes

Optoelectronic Device SiC Wafer for Light Emitting Diodes

Brand Name ZG
Model Number MS
Certification CE
Place of Origin CHINA
Minimum Order Quantity 1 piece
Price USD10/piece
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 10000 pieces per month
Delivery Time 3 working days
Packaging Details Strong wooden box for Global shipping
Application High power device Optoelectronic device GaN epitaxy device Light emitting diode
Diameter Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6"
Thickness 330 um ~ 350 um
Grade Production grade / Research grade
Detailed Product Description

 

 

SIC Wafer

 

Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

 

SiC Wafer Application

 

High frequency deviceHigh temperature device
High power deviceOptoelectronic device
GaN epitaxy deviceLight emitting diode

 

SiC Wafer Properties

 
Polytype6H-SiC4H-SiC
Crystal stacking sequenceABCABCABCB
Lattice parametera=3.073A , c=15.117Aa=3.076A , c=10.053A
Band-gap3.02 eV3.27 eV
Dielectric constant9.669.6
Refraction Indexn0 =2.707 , ne =2.755n0 =2.719 ne =2.777

Product Specification

 
Polytype4H / 6H
DiameterØ 2" / Ø 3" / Ø 4"
Thickness330 um ~ 350 um
OrientationOn axis <0001> / Off axis <0001> off 4°
ConductivityN - type / Semi-insulating
DopantN2 ( Nitrogen ) / V ( Vanadium )
Resistivity ( 4H-N )0.015 ~ 0.03 ohm-cm
Resistivity ( 6H-N )0.02 ~ 0.1 ohm-cm
Resistivity ( SI )> 1E5 ohm-cm
SurfaceCMP polished
TTV<= 15 um
Bow / Warp<= 25 um
GradeProduction grade / Research grade

 

Product Tags: Optoelectronic Device SiC Wafer   SiC Wafer for Light Emitting Diodes  
Related Products
Email to this supplier
 
From:
Enter your Email please.
To: HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
Subject:
Message:
Characters Remaining: (80/3000)