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Unlocking Lithium Tantalate On Insulator ( LTOI ) For Advanced Photonic Applications

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Hangzhou Freqcontrol Electronic Technology Ltd.

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Province/State:shanghai

Country/Region:china

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Unlocking Lithium Tantalate On Insulator ( LTOI ) For Advanced Photonic Applications

Brand Name BonTek
Model Number LNOI Wafer
Certification ISO:9001, ISO:14001
Place of Origin China
Minimum Order Quantity 25 pcs
Price $2000/pc
Payment Terms T/T
Supply Ability 50000 pcs/Month
Delivery Time 1-4 weeks
Packaging Details Cassette/ Jar package, vaccum sealed
Product LiTaO3 On Insulator
Diameter 4 inch, Φ100mm
Top Layer Lithium Tantalate
Top Thickness 300~600nm
Insolation SiO2 Thermal Oxide
Insolation Thickness 2000±15nm; 3000±50nm; 4700±100nm
Substrate Silicon Wafer
Application Optical Waveguides and Microwaveguides
Detailed Product Description

Unlocking the Potential of Lithium Tantalate on Insulator (LTOI) for Advanced Photonic Applications

 

LTOI stands for Lithium Tantalate on Insulator, is a specialized substrate technology used in the field of integrated photonics. It involves the transfer of a thin layer of lithium tantalate (LiTaO3) crystal onto an insulating substrate, typically silicon dioxide (SiO2) or silicon nitride (Si3N4). LTOI substrates offer unique advantages for the development of compact and high-performance photonic devices.

 

LTOI substrates are created through a bonding process where a thin layer of lithium tantalate crystal is transferred onto an insulating substrate. This process can be achieved through various techniques, including wafer bonding or ion-cutting, ensuring a strong bond between the layers.

 

LTOI substrates offer unique advantages for advanced photonic applications. Their utilization in electro-optic modulators, waveguides, nonlinear optical devices, sensors, quantum photonics, and integrated photonic circuits demonstrates the broad range of applications and the potential for pushing the boundaries of integrated photonics technology.

 

 

LTOI Wafer
StructureLiTaO3 / SiO2 / SiLTV / PLTV< 1.5 μm ( 5 5 mm2 ) / 95%
DiameterΦ100 ± 0.2 mmEdge Exclution5 mm
Thickness500 ± 20 μmBowWithin 50 μm
Primary Flat Length47.5 ± 2 mm
57.5 ± 2 mm
Edge Trimming2 ± 0.5 mm
Wafer BevelingR TypeEnvironmentalRohs 2.0
Top LT Layer
Average Thickness400/600±10 nmUniformity< 40nm @17 Points
Refraction indexno > 2.2800, ne < 2.2100 @ 633 nmOrientationZ axis ± 0.3°
GradeOpticalSurface Ra< 0.5 nm
Defects>1mm None;
1 mm Within 300 total
DelaminationNone
Scratch>1cm None;
1cm Within 3
Primary FlatPerpendicular to +Y Axis ± 1°
Isolation SiO2 Layer
Average Thickness2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nmUniformity< ±1% @17 Points
Fab. MethodThermal OxideRefraction index1.45-1.47 @ 633 nm
Substrate
MaterialSiOrientation<100> ± 1°
Primary Flat Orientation<110> ± 1°Resistivity> 10 kΩ·cm
Backside ContaminationNo visible stainBacksideEtch

 

 

 


 

 

 

Product Tags: Photonic Lithium Tantalate On Insulator   LTOI Piezoelectric Wafer  
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