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Hangzhou Freqcontrol Electronic Technology Ltd.
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High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

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Hangzhou Freqcontrol Electronic Technology Ltd.

City: hangzhou

Province/State:shanghai

Country/Region:china

Tel:86-571-85803723

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High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

Brand Name BonTek
Model Number LNOI Wafer
Certification ISO:9001, ISO:14001
Place of Origin China
Minimum Order Quantity 25 pcs
Price $2000/pc
Payment Terms T/T
Supply Ability 1000 pcs/Month
Delivery Time 1-4 weeks
Packaging Details Cassette/ Jar package, vaccum sealed
Product Piezo On Insulation
Diameter 4 inch, 6 inch
Top Layer Lithium Niobate
Top Thickness 300~600nm
Insolation SiO2 Thermal Oxide
Insolation Thickness 2000±15nm; 3000±50nm; 4700±100nm
Substrate Silicon
Application Optical Waveguides and Microwaveguides
Detailed Product Description

Enabling High-Speed Modulation And Wide Bandwidth With LNOI POI

 

Piezo on Insulation (POI) refers to a technology where piezoelectric materials are integrated onto an insulating substrate. This allows for the utilization of the piezoelectric effect while providing electrical isolation. The POI technology enables the development of various devices and systems that harness the unique properties of piezoelectric materials for sensing, actuation, and energy harvesting applications.

 

POI (Piezo on Insulation) technology finds various applications in different fields due to its ability to combine the advantages of piezoelectric materials with electrical isolation. Such as sensors, Microelectromechanical Systems and Energy Storage and Generation.

 

The versatility of integrating piezoelectric materials onto an insulating substrate opens up possibilities for innovative solutions in diverse fields, including electronics, energy, healthcare, and more.

 

 

LNOI Wafer
StructureLN / SiO2 / SiLTV / PLTV< 1.5 μm ( 5 5 mm2 ) / 95%
DiameterΦ100 ± 0.2 mmEdge Exclution5 mm
Thickness500 ± 20 μmBowWithin 50 μm
Primary Flat Length47.5 ± 2 mm
57.5 ± 2 mm
Edge Trimming2 ± 0.5 mm
Wafer BevelingR TypeEnvironmentalRohs 2.0
Top LN Layer
Average Thickness400/600±10 nmUniformity< 40nm @17 Points
Refraction indexno > 2.2800, ne < 2.2100 @ 633 nmOrientationX axis ± 0.3°
GradeOpticalSurface Ra< 0.5 nm
Defects>1mm None;
1 mm Within 300 total
DelaminationNone
Scratch>1cm None;
1cm Within 3
Primary FlatPerpendicular to +Y Axis ± 1°
Isolation SiO2 Layer
Average Thickness2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nmUniformity< ±1% @17 Points
Fab. MethodThermal OxideRefraction index1.45-1.47 @ 633 nm
Substrate
MaterialSiOrientation<100> ± 1°
Primary Flat Orientation<110> ± 1°Resistivity> 10 kΩ·cm
Backside ContaminationNo visible stainBacksideEtch

 

 

 


 

 

 

Product Tags: High Speed Modulation Piezoelectric Wafer   Wide Bandwidth Piezoelectric Wafer   LNOI POI Piezoelectric Wafer  
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